Physical Properties of p-Type Tin Monoxide Films Deposited at Low Temperature by Radio Frequency Magnetron Sputtering
Physical Properties of p-Type Tin Monoxide Films Deposited at Low Temperature by Radio Frequency Magnetron Sputtering
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DOI：
10.1143/apex.4.071101
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发表时间：
2011-06
影响因子：
2.3
通讯作者：
T. Toyama;Y. Seo;Takafumi Konishi;H. Okamoto;Y. Tsutsumi
中科院分区：
文献类型：
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作者：
T. Toyama;Y. Seo;Takafumi Konishi;H. Okamoto;Y. Tsutsumi
采用射频磁控溅射法在低温（60-220 °C）下制备了SnO薄膜。X射线衍射仪和扫描电子显微镜显示，薄膜中含有几十纳米长的多晶SnO纳米棒，并且在≥180 °C下生长的薄膜中存在SnO 2，这表明SnO通过结晶分解。光声和透射光谱显示，间接的基本间隙为0.7 eV和直接间隙为1.29 eV，分别。热电和霍尔测量都表明，在≤180 °C下生长的薄膜表现出p型导电性。薄膜的电学和光学性质的合理化，考虑到结构的变化所造成的反硝化。
SnO films were fabricated at low temperature (60–220 °C) by rf magnetron sputtering. X-ray diffractometry and scanning electron microscopy revealed that the films contained polycrystalline SnO nanorods several tens of nanometers long and SnO2 was present in films grown at ≥180 °C, suggesting the decomposition of SnO by disproportionation. Photoacoustic and transmittance spectroscopies revealed an indirect fundamental gap of 0.7 eV and a direct gap of ∼2.9 eV, respectively. Thermoelectric and Hall measurements both indicated that films grown at ≤180 °C exhibited p-type conductivity. The electrical and optical properties of the films are rationalized by considering the structural changes caused by disproportionation.