Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency
Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency
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DOI：
10.1063/1.4879643
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发表时间：
2014-05
影响因子：
4
通讯作者：
Qiong Nian;M. Y. Zhang;B. D. Schwartz;G. Cheng
中科院分区：
文献类型：
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作者：
Qiong Nian;M. Y. Zhang;B. D. Schwartz;G. Cheng
透明导电氧化物（TCO）中最具挑战性的问题之一是在不影响透明度的情况下提高其导电性。 TCO 薄膜的高电导率通常来自于高载流子浓度，但由于自由载流子吸收，这不利于透明度。在这里，我们表明，通过脉冲激光沉积在蓝宝石上制备的铝掺杂 ZnO (AZO) 薄膜的紫外激光结晶 (UVLC) 会产生更高的霍尔迁移率，从而可以放松电导率/透明度权衡的限制。 X 射线衍射图和形态表征显示 UVLC 期间晶粒生长和结晶度增强，从而减少薄膜内部缺陷。光电测量表明，UVLC 显着提高了电子迁移率，同时载流子浓度降低，从而同时提高了电导率和透明度。优化 UVLC 下的 AZO 薄膜在低载流子浓度下实现了 79 cm2/V s 的最高电子迁移率...
One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm2/V s at a low carrier concen...