Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces
Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces
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有机膦酸盐作为研究 SiO2/Si 表面单层电子传输的模型系统
DOI：
10.1063/1.4811441
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发表时间：
2013
影响因子：
4
通讯作者：
M. Tornow
中科院分区：
文献类型：
--
作者：
A. Bora;A. Pathak;Kung;M. Vexler;A. Kuligk;A. Cattani;B. Meinerzhagen;G. Abstreiter;J. Schwartz;M. Tornow
我们报告的电输运测量烷基膦酸酯自组装单层生长在纳米薄的二氧化硅上的高度p型掺杂的硅。在小偏压下，直接隧穿的特征在于衰减常数β = 0.7/碳。在硅的较大正偏压（1.1-1.5 V）下，电流-电压迹线具有突出的肩部，使人联想到负差分电阻。我们将此功能归因于一个显着减少陷阱辅助隧穿，支持模拟。因此，有机膦酸单分子膜是通过有序结构研究电输运的优良模型系统;它们还提供了SiO2/Si表面的高效电钝化。
We report electrical transport measurements made on alkylphosphonate self-assembled monolayers grown on nanometer-thin SiO2 on top of highly p-doped silicon. At small bias direct tunneling is characterized by a decay constant of β ≈ 0.7/carbon. At larger positive bias to the silicon (1.1–1.5 V) the current-voltage traces feature a prominent shoulder, reminiscent of a negative differential resistance. We attribute this feature to a significant reduction in trap-assisted tunneling, as supported by a simulation. Hence, organophosphonate monolayers are excellent model systems to study electrical transport through ordered structures; they also provide highly efficient electrical passivation of the SiO2/Si surface.