The forbidden bandgap characteristic of EBG structures

The forbidden bandgap characteristic of EBG structures
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EBG结构的禁带隙特性

DOI:
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发表时间:
2008
期刊:
影响因子:
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通讯作者:
Kai
Kai
中科院分区:
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文献类型:
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作者:
S. Steven Yang;A. Kishk;Kai

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比较了几种电磁带隙(EBG)结构的带隙特性,并对一种宽带单平面紧凑光子带隙(UC-PBG)结构进行了参数研究。已经提出,蘑菇型EBG结构的带隙带宽在使用较低介电常数的衬底或当使用较大的衬底厚度时增加。然而,对于不具有短路通孔的UC-PBG结构,带隙特性不遵循具有短路通孔的EBG结构中的趋势。此外,它表明,带隙频率随衬底的介电常数的变化,但带隙带宽没有特定的趋势与衬底的介电常数。© 2008 Wiley Periodicals,Inc. Microwave Opt Technol Lett 50:2965-2967,2008;在线发表于Wiley InterScience(www.interscience.wiley.com)。DOI 10.1002/mop.23804
The bandgap characteristics of several electromagnetic bandgap (EBG) structures are compared, and parametric studies of a wideband uniplanar compact photonic bandgap (UC‐PBG) structure are carried out. It has been presented that the bandgap bandwidth of the mushroom type EBG structure increases when a lower dielectric constant substrate is used or when a larger substrate thickness is used. However, for the UC‐PBG structures, which do not have shorting vias, the bandgap characteristic does not follow the trend as it is in the EBG structure with shorting via. Moreover, it is demonstrated that the bandgap frequency varies with the dielectric constant of the substrate, but the bandgap bandwidth does not have particular trend with the dielectric constant of the substrate. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2965–2967, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23804