GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors
GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors
复制标题
DOI：
10.1088/1361-6528/aa57b6
复制
发表时间：
2017-01
期刊：
影响因子：
3.5
通讯作者：
Feng Yu;Shengbo Yao;F. Römer;B. Witzigmann;T. Schimpke;M. Strassburg;A. Bakin;H. Schumacher;E. Peiner;H. S. Wasisto;A. Waag
中科院分区：
文献类型：
--
作者：
Feng Yu;Shengbo Yao;F. Römer;B. Witzigmann;T. Schimpke;M. Strassburg;A. Bakin;H. Schumacher;E. Peiner;H. S. Wasisto;A. Waag
垂直排列的氮化镓(GaN)纳米线(NW)阵列由于在光电子学和纳米电子学领域具有潜在的新型器件而引起了人们的广泛关注。在这项工作中，我们结合了合适的纳米机械加工工艺，包括干法刻蚀和湿法刻蚀，设计并制备了GaN NW阵列。在电感耦合等离子体干法反应离子刻蚀后，GaN NW用AZ400K显影剂(即，激活能为0.69±0.02 eV，加一个铬掩模)进行湿法化学刻蚀，形成六方光滑的a平面侧壁。用氢氧化钾(KOH)水溶液进行的刻蚀实验表明，侧壁的择优取向依赖于腐蚀剂的浓度。为了理解湿法刻蚀的各向异性机理，提出了一个关于晶面表面键合构型的模型。最后，制作了基于NW阵列的包栅结构垂直场效应晶体管。由99个NW组成的器件具有阈值电压为1.5V的增强型工作模式、卓越的静电控制和~gt；10 mA的大电流输出，在下一代功率开关和高温数字电路中具有广泛的应用前景。
Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.