Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications
Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications
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DOI：
10.1063/1.3496457
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发表时间：
2010-10-11
影响因子：
4
通讯作者：
Fiore, A.
中科院分区：
文献类型：
--
作者：
Gaggero, A.;Nejad, S. Jahanmiri;Fiore, A.
我们展示了基于在GAAS上生长的NBN薄膜的有效纳米线超导型单光子探测器（SSPD）。 NBN膜的厚度为3至5 nm，DC磁控蛋白溅射在350摄氏度的GAAS基板上沉积了。这些膜显示出与蓝宝石和MGO上相似膜相当的超导性能。为了证明整体整合的潜力，在GAAS/Alas Bragg镜子上制造并测量了SSPD，显示了清晰的空腔增强，在lambda = 1300 nm和t = 4.2 K.的峰值量子效率为18.3％（C）（C）（C） 2010年美国物理研究所。 [doi：10.1063/1.3496457]
We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 degrees C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at lambda=1300 nm and T=4.2 K. (C) 2010 American Institute of Physics. [doi:10.1063/1.3496457]