Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors
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DOI:
10.1038/nmat4271
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发表时间:
2015-06-01
期刊:
影响因子:
41.2
通讯作者:
Zhu, X-Y.
Zhu, X-Y.
中科院分区:
材料科学1区
文献类型:
--
作者:
Zhu, Haiming;Fu, Yongping;Zhu, X-Y.

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The remarkable performance of lead halide perovskites in solar cells can be attributed to the long carrier lifetimes and low non-radiative recombination rates, the same physical properties that are ideal for semiconductor lasers. Here, we show room-temperature and wavelength-tunable lasing from single-crystal lead halide perovskite nanowires with very low lasing thresholds (220 nJ cm(-2)) and high quality factors (Q similar to 3,600). The lasing threshold corresponds to a charge carrier density as low as 1.5 x 1016 cm(-3). Kinetic analysis based on time-resolved fluorescence reveals little charge carrier trapping in these single-crystal nanowires and gives estimated lasing quantum yields approaching 100%. Such lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.