(Ba0.5Sr0.5)(Co0.8Fe0.2)O3-δ Thin Films Derived by Metal-Organic Deposition: Preparation of Nanoscaled Surface Modifications and Electrochemical Characterization
(Ba0.5Sr0.5)(Co0.8Fe0.2)O3-δ Thin Films Derived by Metal-Organic Deposition: Preparation of Nanoscaled Surface Modifications and Electrochemical Characterization
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金属有机沉积衍生的 (Ba0 5Sr0 5)(Co0 8Fe0 2)O3-δ 薄膜:纳米级表面改性的制备和电化学表征
DOI:
10.1149/2.0971603jes
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发表时间:
2016
影响因子:
3.9
通讯作者:
E. Ivers-Tiffée
中科院分区:
文献类型:
--
作者:
K. Asano;C. Niedrig;W. Menesklou;S. F. Wagner;E. Ivers-Tiffée
In this study, nanoscaled (Ba 0.5 Sr 0.5)(Co 0.8 Fe 0.2) O 3-δ (BSCF) thin films (with thicknesses below 100 nm) have been successfully deposited onto NdGaO 3 single crystal substrates using a metal-organic deposition (MOD) method. In contrast to physical vapor deposition techniques, eg pulsed-laser deposition or magnetron sputtering, BSCF thin films formed by an MOD method provide the possibility to custom-tailor the surface morphology by subsequent annealing treatments, enabling selective surface nanostructuring. Changes of surface area or phase composition (cubic, hexagonal BSCF, others) are expected to affect the catalytic activity of oxygen-transport membranes. A study of surface morphologies achieved by a variation of the post-deposition thermal treatment is presented. The electrical properties of selected MOD thin films were determined up to 800 C and compared to data for epitaxial BSCF thin films and bulk samples. Lastly, oxygen exchange kinetics were investigated by electrical conductivity relaxation measurements analyzed, in the frequency domain, yielding oxygen surface exchange coefficients k δ (T) between 400... 600 C.
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影响因子:
4
作者:
S. Yakovlev;C. Yoo;Shumin Fang;H. Bouwmeester
通讯作者:
H. Bouwmeester
影响因子:
9.5
作者:
N. Zotov;S. Baumann;W. Meulenberg;R. Vaßen
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R. Vaßen
影响因子:
3.9
作者:
Hayd, Jan;Yokokawa, Harumi;Ivers-Tiffee, Ellen
通讯作者:
Ivers-Tiffee, Ellen
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
Lei Wang;R. Merkle;F. Baumann;Juergen Fleig;J. Maier
通讯作者:
J. Maier
影响因子:
3.9
作者:
K. Asano;Dino Klotz;J. Hayd;J. Szász;E. Ivers-Tiffée
通讯作者:
K. Asano;Dino Klotz;J. Hayd;J. Szász;E. Ivers-Tiffée