Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications
Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications
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DOI：
10.1109/16.59911
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发表时间：
1990-10
影响因子：
3.1
通讯作者：
K. Shenai
中科院分区：
文献类型：
--
作者：
K. Shenai
讨论了电力电子系统的性能改进、器件结构、工艺技术、可制造性以及从三种不同的工艺技术中获得的性能结果，这三种工艺技术分别基于选择性TiSi/Sub2/和低压化学气相沉积(LPCVD)钨和包层LPCVD WSI/Sub2/。确定了几个关键因素，这些因素应该有助于选择和实施针对特定系统增强的耐火金属化。研究表明，使用耐火多层金属化的先进晶片制造技术的应用，使低压硅功率器件获得了近乎最佳的性能。表中显示了应用于电力系统应用的难熔金属化的技术现状。可以看出，基于TISI/SUB 2/的技术近期商业化潜力最大，其次是LPCVD WSI/SUB 2/。>；
Power electronic system performance enhancements, device structures, process technologies, manufacturability, and performance results obtained from three distinct process technologies that are based on selective TiSi/sub 2/ and low-pressure chemical vapor deposition (LPCVD) tungsten, and blanket LPCVD WSi/sub 2/ are discussed. Several key factors are identified that should be helpful in the choice and implementation of refractory metallization targeted for a specific system enhancement. It is demonstrated that the application of advanced wafer fabrication technologies using refractory multilevel metallizations has resulted in nearly optimal performance from low-voltage silicon power devices. Tables are shown which summarize the current state of the art of refractory metallization as applied to power system applications. It is seen that TiSi/sub 2/-based technology has the highest potential for near-term commercialization, followed by LPCVD WSi/sub 2/. >