Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids
Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids
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DOI：
10.1364/oe.15.002555
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发表时间：
2007-03-05
期刊：
影响因子：
3.8
通讯作者：
Lin, Chi-Kuan
中科院分区：
文献类型：
--
作者：
Lin, Gong-Ru;Lin, Chun-Jung;Lin, Chi-Kuan
在低偏压下，首次观察到在 SiOx/Si 界面上具有硅纳米金字塔的金属-SiOx-Si 发光二极管 (MOSLED) 的增强光发射。 Si纳米金字塔具有提供SiOx/Si界面粗糙度的能力，并通过新颖的SiOx/纳米Si金字塔/Si结构改善基于载流子注入的福勒-诺德海姆（F-N）隧道机制。 HRTEM分析表明，结晶界面Si纳米金字塔的尺寸和浓度分别在10nm（高）×10nm（宽）和10（8）-10（11）cm（-2）范围内精确可控。这些Si纳米金字塔的表面密度高达10(12)/cm(2)，F-N隧道阈值可以从7 MV/cm降低到1.4 MV/cm。界面Si纳米金字塔的表面密度与阈值F-N隧道场之间的相关性已被阐明。这种导通减少实质上提供了损伤较少的SiOx/Si界面，因为MOSLED电致发光所需的偏压大大降低，从而在较低偏压条件下抑制了与结构损伤相关的辐射缺陷的产生，并导致更稳定的近红外电致发光，线宽变窄，工作寿命延长至>3小时。首次报道了在 75 V 偏置电压和 32 mA/cm(2) 电流密度下输出近 150 nW 的 EL 功率。 (c) 2007 年美国光学学会。
The premier observation on the enhanced light emission from such a metal-SiOx-Si light emitting diode (MOSLED) with Si nano-pyramids at SiOx/Si interface is demonstrated at low biases. The Si nano-pyramids exhibits capability in providing the roughness of the SiOx/Si interface, and improving the Fowler-Nordheim (F-N) tunneling mechanism based carrier injection through the novel SiOx/nano-Si-pyramid/Si structure. HRTEM analysis reveals a precisely controllable size and concentration of the crystallized interfacial Si nano-pyramids at 10nm(height) x 10nm(width) and within the range of 10(8)-10(11) cm(-2), respectively. With these Si nano-pyramids at a surface density of up to 10(12)/cm(2), the F-N tunneling threshold can be reduce from 7 MV/cm to 1.4 MV/cm. The correlation between surface density of the interfacial Si nano-pyramids and the threshold F-N tunneling field has been elucidated. Such a turn-on reduction essentially provides a less damaged SiOx/Si interface as the required bias for the electroluminescence of the MOSLED is greatly decreased, which thus suppresses the generation of structural damage related radiant defects under a lower biased condition and leads to a more stable near-infrared electroluminescence with a narrowing linewidth and an operating lifetime lengthened to > 3 hours. An output EL power of nearly 150 nW under a biased voltage of 75 V and current density of 32 mA/cm(2) is reported for the first time. (c) 2007 Optical Society of America.