O-band excited state quantum dot bilayer lasers
O-band excited state quantum dot bilayer lasers
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DOI：
10.1063/1.3605590
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发表时间：
2011-08-01
影响因子：
4
通讯作者：
Murray, R.
中科院分区：
文献类型：
--
作者：
Majid, M. A.;Childs, D. T. D.;Murray, R.
双层InAs/GaAs量子点（QD）激光器工作在激发态的波长，跨越O-波段的演示。量子点系综激发态的较高饱和增益和较低散射时间为快速直接调制激光器提供了机会。我们预测的K-因子限制的调制带宽从量子点激光器在激发态下工作，由于减少载流子传输和散射时间，同时保持高峰模式增益的增加。(C)2011年美国物理学会。[doi：10.1063/1.3605590]
Bilayer InAs/GaAs quantum dot (QD) lasers operating in the excited state at wavelengths that span the O-band are demonstrated. The higher saturated gain and lower scattering time of the excited states of the ensemble of QDs offers the opportunity for fast direct-modulation lasers. We predict an increase in K-factor limited modulation bandwidth from QD lasers operating in the excited state due to a reduction in carrier transport and scattering times whilst maintaining high peak modal gain. (C) 2011 American Institute of Physics. [doi:10.1063/1.3605590]