III-Nitride Devices and Nanoengineering
III-Nitride Devices and Nanoengineering
复制标题
DOI：
10.1142/p568
复制
发表时间：
2008-08
期刊：
影响因子：
--
通讯作者：
Z. Feng
中科院分区：
文献类型：
--
作者：
Z. Feng
近年来，基于GaN及其相关材料的器件、纳米科学和技术取得了很大的发展。新型GaN基器件如紫外光探测器、快速p-HEMT和微波器件的发展远远优于其他半导体材料基器件。这本书的综述章节由知名专家撰写，涵盖了近年来最重要的主题和成就，讨论了不同群体取得的进展，并提出了未来的方向。每一章还介绍了理论和实验的基础。这本书是设备设计和加工工程师，材料种植者和评估者，研究生和科学家以及GaN领域的新手的宝贵资源。
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment. This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.