Remarkable electron and phonon band structures lead to a high thermoelectric performance ZT > 1 in earth-abundant and eco-friendly SnS crystals
Remarkable electron and phonon band structures lead to a high thermoelectric performance ZT > 1 in earth-abundant and eco-friendly SnS crystals
复制标题
显着的电子和声子能带结构导致地球丰富且环保的 SnS 晶体具有高热电性能 ZT > 1
DOI：
10.1039/c8ta03150a
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发表时间：
2018-06-07
影响因子：
11.9
通讯作者：
Zhao, Li-Dong
中科院分区：
文献类型：
--
作者：
He, Wenke;Wang, Dongyang;Zhao, Li-Dong
硒化锡（SnSe）是一种简单的二元化合物，具有成本低、资源丰富、环境友好等优点，具有良好的发电前景，引起了热电界的广泛关注。在这里，我们报告了一个更有利的SnS晶体与有前途的热电性能，作为替代SnSe。在300 ~ 873 K范围内，器件ZT（ZT（dev））> 0.57，转换效率接近10.4%。我们把SnS的优异性能归因于其显著的电子和声子能带结构。SnS具有多个价带，空穴掺杂可以激活多个价带，使费米能级进入价带，激活多个费米口袋，从而提高Seebeck系数和功率因数，在300 K时功率因数接近30 W cm（-1）K-2。同时，SnS的非谐和各向异性键结导致了较低的热导率，在873 K时为0.65 ~ 0.85 W m（-1）K-1。我们的研究结果表明，SnS是一种很有前途的热电材料的能量转换应用在低，中温范围内。
Tin selenide (SnSe), a simple binary compound with low-cost, earth-abundant and eco-friendly elements, has aroused extensive interest in the thermoelectric community on account of its promising power generation. Herein, we report a much more advantageous SnS crystal with promising thermoelectric performance, as an alternative to SnSe. We found that the maximum ZT > 1.0 at 873 K and high device ZT (ZT(dev)) > 0.57 from 300 to 873 K can be achieved in hole-doped SnS crystals, projecting a conversion efficiency of approximate to 10.4%. We attribute the excellent performance of SnS to its remarkable electron and phonon band structures. SnS possesses multiple valence bands, which can be activated by hole doping through pushing the Fermi level deep into the valence band structure, and activating several Fermi pockets to produce enhanced Seebeck coefficients and high power factors approximate to 30 W cm(-1) K-2 at 300 K. Meanwhile, the anharmonic and anisotropic bonding of SnS leads to a low thermal conductivity, which ranges from 0.65 to 0.85 W m(-1) K-1 at 873 K. Our results indicate that SnS is a promising thermoelectric material for energy conversion applications in low and moderate temperature ranges.