Laterally-Graded Doping into Ge-on-Insulator by Combination of Ion-Implantation and Rapid-Melting Growth
Laterally-Graded Doping into Ge-on-Insulator by Combination of Ion-Implantation and Rapid-Melting Growth
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DOI：
10.1149/2.002307ssl
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发表时间：
2013
影响因子：
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通讯作者：
R. Matsumura;M. Anisuzzaman;H. Yokoyama;T. Sadoh;M. Miyao
中科院分区：
文献类型：
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作者：
R. Matsumura;M. Anisuzzaman;H. Yokoyama;T. Sadoh;M. Miyao
具有横向梯度掺杂分布的绝缘体上Ge（GOI）对于形成高效热电器件等功能器件至关重要。为了实现这一目标，研究了在 1 × 1012 − 2 × 1015 cm−2 剂量范围下注入 P 离子的 a-Ge 带的快速熔化生长。当剂量超过 1 × 1014 cm−2 时，生长的 Ge 层表现出 n 型传导。此外，对于 2 × 1015 cm−2 的剂量，通过回熔过程中的 P 偏析，在生长区域（生长距离：0–300 μm）实现了横向梯度掺杂分布（~8 × 1015 cm−3/μm）。分级掺杂分布产生约 0.6 V/cm 的电场，可以通过减小带长度来增加电场。该技术有望促进硅平台上功能器件的集成。
Ge-on-insulator (GOI) having laterally-graded doping-profiles is essential to formation of functional-devices such as high-efficiency thermo-electric devices. To achieve this, rapid-melting growth of a-Ge strips implanted with P ions is investigated under a dose range of 1 × 1012 − 2 × 1015 cm−2. For dose over 1 × 1014 cm−2, grown-Ge layers show n-type conduction. Moreover, for dose of 2 × 1015 cm−2, a laterally-graded doping-profile (~8 × 1015 cm−3/μm) is achieved in the grown region (growth-distance: 0–300 μm) by P segregation during the melt-back process. The graded doping-profile generates electric-fields of ~0.6 V/cm, which can be increased by decreasing strip-length. This technique is expected to facilitate integration of functional-devices on Si-platform.