Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method-Novel Platform for High-Mobility Transistors and Photonic Devices
Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method-Novel Platform for High-Mobility Transistors and Photonic Devices
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通过快速熔融生长方法制造高质量GOI和SGOI结构——高迁移率晶体管和光子器件的新平台
DOI：
10.1149/05004.0261ecst
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
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作者：
Tatsuyuki Maeda;Toma Kanehira;and Hiroyuki Awano;Heiji Watanabe
高质量的绝缘体上锗（GOI）和完全弛豫的绝缘体上硅锗（SiGe）（SGOI）结构已被证明是由快速熔体生长方法。我们成功地制造了单晶局部GOI结构，即通过横向液相外延（横向LPE）在几微米宽的微坩埚中制备了超过100微米长的Ge线。与传统SOI器件相比，横向LPE制备的GOI MOSFET具有上级载流子迁移率和开关电流比，表明LPE形成的Ge沟道和MOS界面具有优良的电学性能。此外，SOI衬底上的无位错的完全弛豫SiGe层被证明是由垂直LPE，其中发现晶体缺陷被限制在外延生长的弛豫SiGe和SOI层之间的组成梯度SiGe夹层。这些基于快速金属生长的新方法将为实现下一代锗基高迁移率晶体管和光子器件平台开辟新的途径。
High-quality germanium-on-insulator (GOI) and fully relaxed silicon germanium (SiGe)-on-insulator (SGOI) structures have been demonstrated by the rapid melt growth method. We successfully fabricated single-crystalline local GOI structures, that is, Ge wires over 100 µm long within microcrucibles of a few µm wide by means of lateral liquid phase epitaxy (lateral LPE). GOI MOSFETs produced by lateral LPE exhibited superior carrier mobility and on/off current ratio to those of conventional SOI devices, indicating excellent electrical properties of Ge-channel and MOS interface formed by LPE. Moreover, dislocation-free fully relaxed SiGe layers on SOI substrates were demonstrated by vertical LPE, in which crystallographic defects were found to be confined within the compositionally graded SiGe interlayer between the epitaxcially grown relaxed SiGe and SOI layers. These novel methods based on the rapid metal growth will open up a new pathway to realize platform for next-generation Ge-based highmobility transistors and photonic devices.