High-density matrix-addressable AlInGaN-Based 368-nm microarray light-emitting diodes
High-density matrix-addressable AlInGaN-Based 368-nm microarray light-emitting diodes
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DOI：
10.1109/lpt.2004.835626
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发表时间：
2004-11-01
影响因子：
2.6
通讯作者：
Dawson, MD
中科院分区：
文献类型：
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作者：
Jeon, CW;Choi, HW;Dawson, MD
我们报告的紫外线（UV）微阵列发光二极管的制造，对应用程序，包括无掩模曝光。具有64 × 64元件的器件已被制造成矩阵寻址格式，在小于1.0 mA的驱动电流下，每20 μ m直径元件产生高达1 μ W的定向输出功率。发现每个元件器件的电阻强烈依赖于n-GaN条的长度。发射的中心波长被测量为368 nm，其非常接近i线（365 nm）UV光源的中心波长。据我们所知，这是第一份详细介绍这种在紫外线下工作的设备的制造和性能的报告。
We report on the fabrication of ultraviolet (UV) microarray light-emitting diodes, toward applications including mask-free photolithographic exposure. Devices with 64 x 64 elements have been fabricated in matrix-addressed format, generating directed output powers of up to 1 muW per 20-mum-diameter element at less than 1.0-mA drive current. The resistance of each elemental device was found to depend strongly on the n-GaN stripe length. The center wavelength of the emission was measured to be 368 nm, which is very close to that of an i-line (365 nm) UV light source. To our knowledge, this is the first report detailing the fabrication and performance of such devices operating in the UV.