The influence of annealing on yttrium oxide thin film deposited by reactive magnetron sputtering: Process and microstructure
The influence of annealing on yttrium oxide thin film deposited by reactive magnetron sputtering: Process and microstructure
复制标题
DOI：
10.1016/j.nme.2016.12.031
复制
发表时间：
2017
影响因子：
2.6
通讯作者：
Y. Mao;J. Engels;A. Houben;M. Rasinski;J. Steffens;A. Terra;C. Linsmeier;J. Coenen
中科院分区：
文献类型：
--
作者：
Y. Mao;J. Engels;A. Houben;M. Rasinski;J. Steffens;A. Terra;C. Linsmeier;J. Coenen
用反应磁控溅射法在不同的沉积条件和不同的氧气流量下制备了氧化钇薄膜。研究了退火热处理对氧化钇薄膜微结构的影响。氧气流量对沉积速率表现出滞后行为。在低氧气流量下，获得了高沉积速率(高达1.4µm/h)的所谓金属模工艺，而在高氧气流量下，工艺被认为是有毒模式，沉积速率极低(约20 nm/h)。X射线衍射结果表明，在金属模式下制备的氧化钇薄膜表现为亚稳单斜相和稳定立方相两种不同晶体结构的混合体，而中毒模式产物则以单斜相为主。金属模式制备的薄膜具有相对致密的结构和较少的孔隙率。在600 °C下保温15h，作为一种结构稳定化过程，无论是中毒模式还是金属模式，都发生了由亚稳态单斜相向稳定立方相转变的相变。薄膜成分由非化学计量比转变为化学计量比，晶格参数随退火过程的变化而变化。然而，对于金属模式沉积，由于薄膜和衬底材料之间的热膨胀系数的差异，导致了裂纹的产生，这在有毒模式沉积中是看不到的。以不同方式沉积的氧化钇薄膜作为核材料有不同的应用选择。
Yttrium oxide thin films were prepared by reactive magnetron sputtering in different deposition condition with various oxygen flow rates. The annealing influence on the yttrium oxide film microstructure is investigated. The oxygen flow shows a hysteresis behavior on the deposition rate. With a low oxygen flow rate, the so called metallic mode process with a high deposition rate (up to 1.4 µm/h) was achieved, while with a high oxygen flow rate, the process was considered to be in the poisoned mode with an extremely low deposition rate (around 20 nm/h). X-ray diffraction (XRD) results show that the yttrium oxide films that were produced in the metallic mode represent a mixture of different crystal structures including the metastable monoclinic phase and the stable cubic phase, while the poisoned mode products show a dominating monoclinic phase. The thin films prepared in metallic mode have relatively dense structures with less porosity. Annealing at 600 °C for 15 h, as a structure stabilizing process, caused a phase transformation that changes the metastable monoclinic phase to stable cubic phase for both poisoned mode and metallic mode. The composition of yttrium oxide thin films changed from nonstoichiometric to stoichiometric together with a lattice parameter variation during annealing process. For the metallic mode deposition however, cracks were formed due to the thermal expansion coefficient difference between thin film and the substrate material which was not seen in poisoned mode deposition. The yttrium oxide thin films that deposited in different modes give various application options as a nuclear material.