Strain-Assisted Topochemical Synthesis of La-Doped SrVO2H Films
Strain-Assisted Topochemical Synthesis of La-Doped SrVO2H Films
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DOI：
10.1021/acs.cgd.1c00098
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发表时间：
2021-06
影响因子：
3.8
通讯作者：
H. Takatsu;M. Ochi;Morito Namba;Haobo Li;Aurelie Daniel;T. Terashima;K. Kuroki;H. Kageyama
中科院分区：
文献类型：
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作者：
H. Takatsu;M. Ochi;Morito Namba;Haobo Li;Aurelie Daniel;T. Terashima;K. Kuroki;H. Kageyama
过氧化氢SrVO2H（V3+，d2）是一种Mott绝缘体，由于阴离子有序性，具有二维强关联.在这项研究中，我们尝试通过异价取代进行电子掺杂。在SrTiO3衬底上制备的Sr1（cid：0）xLaxVO3薄膜（cid：28）lms（x（cid：20）0：4）经CaH2局部化学还原后，其钒价态仍保持三价。结合二次离子的结果
Perovskite oxyhydride SrVO 2 H (V 3+ , d 2 ) is a Mott insulator with a two-dimensional strong correlation due to anion ordering. In this study, we attempted electron doping by aliovalent substitution. Although Sr 1 (cid:0) x La x VO 3 thin (cid:28)lms ( x (cid:20) 0 : 4 ) on a SrTiO 3 substrate were topochemically reduced using CaH 2 , the vanadium valence of the reduced (cid:28)lms retained trivalent. Combined with the result of secondary ion