Characteristic temperature dependence of the 4f occupancy in the Kondo system CeSi2 -: art. no. 115107
Characteristic temperature dependence of the 4f occupancy in the Kondo system CeSi2 -: art. no. 115107
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DOI：
10.1103/physrevb.63.115107
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发表时间：
2001-03-15
影响因子：
3.7
通讯作者：
Attenkofer, K
中科院分区：
文献类型：
--
作者：
Grazioli, C;Hu, Z;Attenkofer, K
我们对CeSi 2在不同温度下的Ce-L-3 X射线吸收光谱（XAS）进行了研究。提取的Ce 4f占有率显示出强烈的温度依赖性，定性地同意基于单杂质安德森模型的理论预期。我们还讨论了L-3 XAS进行近三价稀土化合物的可靠性与其他高能光谱技术相比。
We present a Ce-L-3 x-ray absorption spectroscopic study (XAS) of CeSi2 at different temperatures. The extracted Ce 4f occupancy shows a strong dependence upon temperature that qualitatively agrees with theoretical expectations based on the single-impurity Anderson model. We additionally discuss the reliability of L-3 XAS performed on nearly trivalent rare-earth compounds in comparison with other high-energy spectroscopy techniques.