Modulated Photoluminescence Mapping of Long-Wavelength Infrared InAs/GaSb Type-II Superlattice: In-Plane Optoelectronic Uniformity
Modulated Photoluminescence Mapping of Long-Wavelength Infrared InAs/GaSb Type-II Superlattice: In-Plane Optoelectronic Uniformity
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DOI：
10.1103/physrevapplied.15.044007
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发表时间：
2021-04-02
影响因子：
4.6
通讯作者：
Shao, Jun
中科院分区：
文献类型：
--
作者：
Chen, Xiren;Zhu, Liangqing;Shao, Jun
窄禁带半导体InAs/GaSb II型超晶格（T2 SL）晶片的面内均匀性是高性能长波长红外光电器件应用的关键但难以评估的先决条件，例如，焦平面阵列（FPA）光电探测器。在这项工作中，我们报告了调制光致发光映射（PL映射）研究的InAs/GaSb T2 SL在长波长红外范围内的空间分辨率的一个典型的FPA像素尺度。分析了PL峰能量、线宽和积分强度的空间分布，结果表明，有效带隙具有较高的面内均匀性，但辐射复合存在较大的起伏。的有效载流子寿命和Shockley-Read-Hall缺陷浓度的面内分布进行评估，与援助的模型，考虑到泵浦功率的PL积分强度的依赖关系。结果表明，相当大的面内非均匀性的光电响应，可能会限制性能的衍生FPA光电探测器，并表示调制PL映射的一个很好的路径，特别是长波长红外FPA半导体的均匀性分析。
In-plane uniformity of narrow-gap semiconductor InAs/GaSb type-II superlattice (T2SL) wafer is a crucial yet hard-to-evaluate prerequisite for high-performance long-wavelength infrared optoelectronic device applications of, e.g., focal-plane-array (FPA) photodetectors. In this work, we report a modulated photoluminescence-mapping (PL-mapping) study of InAs/GaSb T2SL in long-wavelength infrared range with a spatial resolution of a typical FPA-pixel scale. Spatial distributions are analyzed of PL-peak energy, linewidth, and integral intensity, which indicate a high in-plane uniformity of effective band gap but a considerable fluctuation of radiative recombination. The in-plane distributions of effective carrier lifetime and Shockley-Read-Hall defect concentration are evaluated, with the aid of a model that takes into account the pumping power dependence of the PL integral intensity. The results reveal a considerable in-plane nonuniformity of the optoelectronic response that may restrict the performance of the derivative FPA photodetector, and indicate the modulated PL mapping of a good pathway particularly for uniformity analysis of long-wavelength infrared FPA semiconductors.