Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method
Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method
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DOI：
10.7567/apex.7.065501
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发表时间：
2014-05
影响因子：
2.3
通讯作者：
Yuji Yamamoto;S. Harada;Kazuaki Seki;Atsushi Horio;T. Mitsuhashi;Daiki Koike;M. Tagawa;T. Ujihara
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作者：
Yuji Yamamoto;S. Harada;Kazuaki Seki;Atsushi Horio;T. Mitsuhashi;Daiki Koike;M. Tagawa;T. Ujihara
我们报告了一个显着减少的位错密度的4 H-SiC晶体使用高效率的位错转换现象。在溶液生长过程中，通过宏观台阶的台阶流动，穿透位错被有效地转化为基面缺陷。利用这种位错转化现象，我们实现了穿透位错密度的显着降低。因此，穿透螺位错密度仅为30 cm-2，这比籽晶的穿透螺位错密度低两个数量级。在生长的晶体中，4 H-SiC多型体的籽晶被复制，这归因于螺旋生长，由于一些剩余的螺纹螺旋位错上游的台阶流。
We report a marked reduction in the dislocation density of a 4H-SiC crystal using a high-efficiency dislocation conversion phenomenon. During the solution growth, threading dislocations were efficiently converted to basal plane defects by the step flow of macrosteps. Utilizing this dislocation conversion phenomenon, we achieved the marked reduction of threading dislocation density. Consequently, the threading screw dislocation density was only 30 cm−2, which was two orders of magnitude lower than that of the seed crystal. The 4H-SiC polytype of the seed crystal was replicated in the grown crystal, which was attributed to the spiral growth owing to a few remaining threading screw dislocations upstream of the step flow.