Removing contaminants from transferred CVD graphene
Removing contaminants from transferred CVD graphene
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DOI：
10.1007/s12274-020-2671-6
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发表时间：
2020-02
期刊：
影响因子：
9.9
通讯作者：
Xiaojiang Yang;Mingdi Yan
中科院分区：
文献类型：
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作者：
Xiaojiang Yang;Mingdi Yan
化学气相沉积（CVD）是在大型衬底上制备单层石墨烯最常用的技术之一。然而，衬底仅限于很少的过渡金属，如铜。另一方面，许多涉及石墨烯的应用需要与技术相关的衬底，如半导体和金属氧化物，因此，通常需要后续工艺将CVD转移到新的衬底上。由于石墨烯易碎，在转移过程中引入了聚合物薄膜等支撑材料。这带来了意想不到的挑战，其中最大的挑战是在不污染石墨烯的情况下完全去除这种支撑材料。已经开发了许多方法，每种方法都有优点和缺点。本文将首先介绍以聚甲基丙烯酸甲酯（PMMA）为支撑材料的经典转移方法。将讨论PMMA残留的操作程序和问题。将提出减少/消除污染的方法，以及不需要使用PMMA的替代方法。
Chemical vapor deposition (CVD) is among the most utilized techniques to fabricate single-layer graphene on a large substrate. However, the substrate is limited to very few transition metals like copper. On the other hand, many applications involving graphene require technologically relevant substrates like semiconductors and metal oxide, and therefore, a subsequent process is often needed to transfer CVD to the new substrate. As graphene is fragile, a supporting material such as a polymer film, is introduced during the transfer process. This brings unexpected challenges, the biggest of which is the complete removal of this support material without contaminating graphene. Numerous methods have been developed, each having advantages and drawbacks. This review will first introduce the classic transfer method using poly(methyl methacrylate) (PMMA) as the support material. The operating procedure and issues of PMMA residuals will be discussed. Methods to minimize/eliminate contamination will be presented, together with alternative approaches that do not require the use of PMMA.