True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy
True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy
复制标题
具有通过等离子体辅助分子束外延单片生长的隧道结的真蓝色激光二极管
DOI：
--
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
P. Perlin
中科院分区：
文献类型：
--
作者：
C. Skierbiszewski;G. Muzioł;K. Nowakowski;H. Turski;M. Siekacz;A. Feduniewicz;Anna Nowakowska;M. Sawicka;P. Perlin
我们展示了通过等离子体辅助分子束外延 (PAMBE) 生长的真蓝色 450 nm 隧道结 (TJ) 激光二极管 (LD)。 PAMBE 生长过程中不存在氢，使我们能够实现低电阻的 TJ。我们将 TJ LD 与具有 p 型金属接触的标准结构 LD 进行比较。对于两种类型的 LD，阈值电流密度约为 3 kA/cm2，斜率效率为 0.5 W/A。与标准 LD 相比，我们没有观察到 TJ LD 的光学损耗和差分增益有任何显着变化。电流密度高于 2 kA/cm2 时，TJ 的微分电阻率低于 10−4 Ω·cm2。
We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm2 and the slope efficiency is 0.5 W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm2 is below 10−4 Ω·cm2.