Increase in Switching Charge of Ferroelectric SrBi2Ta2O9 Thin Films with Polarization Reversal.
Increase in Switching Charge of Ferroelectric SrBi2Ta2O9 Thin Films with Polarization Reversal.
复制标题
极化反转铁电 SrBi2Ta2O9 薄膜的开关电荷增加。
DOI：
10.1143/jjap.39.5481
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
T. Shiosaki
中科院分区：
文献类型：
--
作者：
S. Okamura;M. Takaoka;T. Nishida;T. Shiosaki
研究了极化反转对SrBi 2 Ta 2 O 9（SBT）电容器开关电荷的影响。我们称这种现象为觉醒。极化反转增加了开关电荷，改善了D-E磁滞回线的矩形度。具有较大幅度、较长宽度和较短周期的开关脉冲产生较大幅度的极化反转开关电荷增加。与此同时，开关后，在一定的外加电场下，电容器的漏电流迅速增加。此外，根据施加电压的扫描方向，唤醒电容的D-E磁滞回线向正偏置场或负偏置场移动。我们得出的结论是，一些自发极化锁定的局部空间电荷在唤醒展示SBT电容器中的界面层被释放的应用程序的许多开关脉冲，和陷阱产生的界面层中的开关呈现的漏电流和D-E滞后电压漂移的快速增加容易的陷阱电平。
The increase in switching charge of as-grown SrBi2Ta2O9 (SBT) capacitors with polarization reversal was investigated. We call this phenomenon wake-up. The switching charge was increased and the rectangularity of the D-E hysteresis loops was improved with polarization reversal. The switching pulse with larger amplitude, longer width and shorter period generated a larger increase in the switching charge with polarization reversal. At the same time, the capacitors came to exhibit a rapid increase in leakage current at a certain applied field after the switching. Furthermore, the D-E hysteresis loop of the capacitors with wake-up shifted toward the positive- or negative-bias field according to the sweeping direction of the applied voltage. We have concluded that some spontaneous polarizations locked by localized space charges at the interface layer in the wake-up-exhibiting SBT capacitors were freed by the application of numerous switching pulses, and trap levels generated in the interface layer by the switching rendered the rapid increase in leakage current and the voltage shift of D-E hysteresis easy.