Realization of conductive InAs nanotubes based on lattice-mismatched InP∕InAs core-shell nanowires
Realization of conductive InAs nanotubes based on lattice-mismatched InP∕InAs core-shell nanowires
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DOI：
10.1063/1.2161576
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发表时间：
2006-01
影响因子：
4
通讯作者：
P. Mohan;J. Motohisa;T. Fukui
中科院分区：
文献类型：
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作者：
P. Mohan;J. Motohisa;T. Fukui
我们报道了用一种简单的纯外轴方法实现单晶InAs纳米管的有序阵列。该工艺涉及在InP (111)A衬底上使用选择性区域金属有机气相外延制备晶格不匹配的InP / InAs核壳纳米线。随后去除InP核心得到垂直排列的InAs纳米管，具有高度均匀的特征和可控的尺寸。透射电子显微镜研究证实，纳米管是单晶的纤锌矿晶体结构和温度相关的输运测量显示，它们是导电的，没有任何故意掺杂。这种导电纳米管的实现为基础研究和未来的器件应用开辟了新的可能性。
We report the realization of ordered arrays of single-crystalline InAs nanotubes by a simple pure-eptiaxial approach. The process involved the fabrication of lattice-mismatched InP∕InAs core-shell nanowires using selective area metalorganic vapor phase epitaxy on InP (111)A substrates. The subsequent removal of the InP core resulted in vertically aligned InAs nanotubes which were highly uniform with well-defined features and controllable dimensions. Transmission electron microscopy studies confirmed that the nanotubes were single-crystalline with wurtzite crystal structure and temperature-dependent transport measurements revealed that they were conductive without any intentional doping. The realization of such conductive InAs nanotubes opens up new possibilities for both fundamental studies and future device applications.