Performance limits for field effect transistors as terahertz detectors
Performance limits for field effect transistors as terahertz detectors
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场效应晶体管作为太赫兹探测器的性能限制
DOI：
10.1063/1.4809672
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发表时间：
2013
影响因子：
4
通讯作者：
M. Shur
中科院分区：
文献类型：
--
作者：
V. Kachorovskii;S. Rumyantsev;W. Knap;M. Shur
我们提出了基于场效应晶体管（fet）的太赫兹探测器在宽带探测范围内的性能极限估计。预测了短通道场效应管在阈下状态下的最大响应度。器件的转换效率Q（定义为辐射感应直流电流耗散的功率与太赫兹耗散功率之比）作为两个变量的函数具有绝对最大值：入射辐射的功率和频率。Q的最大值大约是10%
We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FETs) operating in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime. The conversion efficiency of the device, Q (defined as the ratio of the power dissipated by radiation-induced dc current to the THz dissipated power) has an absolute maximum as a function of two variables: the power and the frequency of the incoming radiation. The maximal value of Q is on the order of 10%.