Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding
Post-bond sub-500 nm alignment in 300 mm integrated face-to-face wafer-to-wafer Cu-Cu thermocompression, Si-Si fusion and oxideoxide fusion bonding
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在 300 mm 集成面对面晶圆到晶圆 Cu-Cu 热压、Si-Si 熔合和氧化物熔合键合中进行键合后低于 500 nm 的对准
DOI：
10.1109/3dic.2010.5751447
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
A. Buxbaum
中科院分区：
文献类型：
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作者：
W. H. Teh;C. Deeb;J. Burggraf;D. Arazi;R. Young;C. Senowitz;A. Buxbaum
我们报告的最新进展，在工具和工艺硬化的第一种300毫米晶圆到晶圆（WTW）的预处理，对准和键合集成工具。我们已经证明了300 mm WtW面对面（FtF）Cu-Cu热压键合，WtW FtF Si-Si熔合键合和WtW FtF氧化物熔合键合的亚500 nm键合后对准精度。基于对代表性键合Cu、氧化物和Si覆盖层晶片的扫描声学显微镜（C-SAM）测量，开发的所有记录工艺（POR）配方都具有不可检测的空隙。在Cu-Cu WtW热压键合步骤中优化的键合图案化晶片分割显示出低至190 nm的对准精度，这是迄今为止最高的精度。使用具有CAD叠加功能的红外高速聚焦离子束（FIB）系统（含XeF 2）来辅助选择性样品制备，我们已经验证了具有1-5 μm直径通孔的通孔链结构处的键合界面没有显示界面空隙。此外，透射电子显微镜（TEM）和电子背散射衍射（EBSD）数据也支持铜相互扩散的证据。
We report recent advances in tool and process hardening of a first of its kind 300 mm wafer-to-wafer (WtW) preprocessing, aligning, and bonding integrated tool. We have demonstrated sub-500 nm post-bond alignment accuracies for 300 mm WtW face-to-face (FtF) Cu-Cu thermocompression bonds, WtW FtF Si-Si fusion bonds, and WtW FtF oxideoxide fusion bonds. All process of record (POR) recipes that were developed had undetectable voids based on scanning acoustic microscope (C-SAM) measurements on representative bonded Cu, oxide, and Si blanket wafers. Optimized bonded patterned wafer splits in the Cu-Cu WtW thermocompression bonding step have shown alignment accuracies down to ∼190 nm, the highest accuracy to date. Using an infrared-enabled, high speed focused ion beam (FIB) system (with XeF2) with a CAD overlay function to assist in selective sample preparation, we have verified that the bonding interfaces at the via chain structures with 1–5 μm diameter vias show no interfacial voids. Also, there is evidence of Cu interdiffusion, as supported by transmission electron microscopy (TEM) and electron backscattering diffraction (EBSD) data.