Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
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DOI：
10.1073/pnas.1704219114
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发表时间：
2017-04-18
影响因子：
11.1
通讯作者：
Hu, Evelyn L.
中科院分区：
文献类型：
--
作者：
Bracher, David O.;Zhang, Xingyu;Hu, Evelyn L.
碳化硅中的点缺陷正迅速成为单光子产生、量子传感和量子信息科学的重要平台。光子晶体腔（PCC）可以作为一个有效的光-物质界面，既可以增加缺陷发射，又可以帮助研究缺陷的性质。在这项工作中，我们制作一维纳米梁PCCs在4 H-碳化硅与嵌入式硅空位中心。这些腔用于实现两个紧密间隔的缺陷零声子线（ZPL）的珀塞尔增强。使用多种技术测量> 80倍的增强。此外，腔耦合到不同的ZPL的性质进行检查。
Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of > 80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.