Improving Si solar cell performance using Mn:ZnSe quantum dot-doped PLMA thin film.
Improving Si solar cell performance using Mn:ZnSe quantum dot-doped PLMA thin film.
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使用 Mn:ZnSe 量子点掺杂 PLMA 薄膜提高硅太阳能电池性能
DOI：
10.1186/1556-276x-8-291
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发表时间：
2013-06-20
影响因子：
--
通讯作者：
Lu M
中科院分区：
文献类型：
--
作者：
Cheng DC;Hao HC;Zhang M;Shi W;Lu M
为了通过光致发光(PL)转换来提高太阳能电池的效率，在硅太阳电池前表面旋涂沉积了掺杂Mn：ZnSe量子点的聚甲基丙烯酸十二酯(PLMA)薄膜。在全太阳光谱(AM0)条件下，QD掺杂PLMA涂层后太阳能电池效率显著提高(约5%~10%)。此外，通过研究掺杂量子点的PLMA对单色和AM0光源的光伏响应随量子点浓度的变化，结合反射率和外部量子效率的测量，精确地评估了PL转换的实际贡献。以量子点浓度为1.6 mg/m l为例，在5.96%的效率提高中，约1.04%的效率来自于光致发光的转换，其余的来自减反射。我们的工作表明，对于光致发光转换在太阳能电池性能改进中的实际应用，需要注意的是，所实现的效率提高可能并不完全归功于光致发光转换。
Poly(lauryl methacrylate) (PLMA) thin film doped with Mn:ZnSe quantum dots (QDs) was spin-deposited on the front surface of Si solar cell for enhancing the solar cell efficiency via photoluminescence (PL) conversion. Significant solar cell efficiency enhancements (approximately 5% to 10%) under all-solar-spectrum (AM0) condition were observed after QD-doped PLMA coatings. Furthermore, the real contribution of the PL conversion was precisely assessed by investigating the photovoltaic responses of the QD-doped PLMA to monochromatic and AM0 light sources as functions of QD concentration, combined with reflectance and external quantum efficiency measurements. At a QD concentration of 1.6 mg/ml for example, among the efficiency enhancement of 5.96%, about 1.04% was due to the PL conversion, and the rest came from antireflection. Our work indicates that for the practical use of PL conversion in solar cell performance improvement, cautions are to be taken, as the achieved efficiency enhancement might not be wholly due to the PL conversion.