Metal-Insulator-Metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition
Metal-Insulator-Metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition
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采用脉冲注入等离子体增强金属有机化学气相沉积法生长的 Y2O3 电介质的金属-绝缘体-金属电容器
DOI：
10.1116/1.1722633
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
O. Joubert
中科院分区：
文献类型：
--
作者：
C. Durand;C. Vallée;V. Loup;O. Salicio;C. Dubourdieu;S. Blonkowski;M. Bonvalot;P. Holliger;O. Joubert
研究了基于氧化钇的金属-绝缘体-金属（MIM）电容器。使用低热预算金属有机化学气相沉积工艺（T⩽350 °C）在 Si/TiSi2/TiN 基板上生长介电薄膜。在不同气氛（氧气或氩气）下进行低温（450°C）或高温（700°C）沉积后退火。 X射线衍射、X射线光电子能谱和二次离子质谱用于确定薄膜的结构和微观结构变化。这些薄膜被纳入简单的 MIM 测试结构中。对于由沉积态或低温 (450°C) 退火薄膜制备的电容器，测量到 2.2 fF/μm2 量级的显着电容值、低漏电流密度（±10 V 时~10−8 A cm−2）和 7-8 MV/cm 的高电击穿场。这些结果表明，氧化钇是一种非常有前途的电介质，可用于硅集成电路应用。研究了基于氧化钇的金属-绝缘体-金属（MIM）电容器。使用低热预算金属有机化学气相沉积工艺（T⩽350 °C）在 Si/TiSi2/TiN 基板上生长介电薄膜。在不同气氛（氧气或氩气）下进行低温（450°C）或高温（700°C）沉积后退火。 X射线衍射、X射线光电子能谱和二次离子质谱用于确定薄膜的结构和微观结构变化。这些薄膜被纳入简单的 MIM 测试结构中。对于由沉积态或低温 (450°C) 退火薄膜制备的电容器，测量到 2.2 fF/μm2 量级的显着电容值、低漏电流密度（±10 V 时~10−8 A cm−2）和 7-8 MV/cm 的高电击穿场。这些结果表明氧化钇是一种非常有前途的用于硅集成电路应用的电介质。
Yttrium oxide-based metal–insulator–metal (MIM) capacitors were investigated. The dielectric films were grown on Si/TiSi2/TiN substrates using a low thermal budget metalorganic chemical vapor deposition process (T⩽350 °C). Low-temperature (450 °C) or high-temperature (700 °C) postdeposition annealings were carried out in different atmospheres (O2 or argon). X-ray diffraction, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the structural and microstructural changes in the films. The films were incorporated into simple MIM test structures. A significant capacitance value of the order of 2.2 fF/μm2, a low leakage current density (∼10−8 A cm−2 at ±10 V) and a high electrical breakdown field of 7–8 MV/cm were measured for capacitors prepared from as-deposited or low temperature (450 °C) annealed films. These results indicate that yttrium oxide is a very promising dielectric to be used in silicon integrated circuits applications.Yttrium oxide-based metal–insulator–metal (MIM) capacitors were investigated. The dielectric films were grown on Si/TiSi2/TiN substrates using a low thermal budget metalorganic chemical vapor deposition process (T⩽350 °C). Low-temperature (450 °C) or high-temperature (700 °C) postdeposition annealings were carried out in different atmospheres (O2 or argon). X-ray diffraction, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the structural and microstructural changes in the films. The films were incorporated into simple MIM test structures. A significant capacitance value of the order of 2.2 fF/μm2, a low leakage current density (∼10−8 A cm−2 at ±10 V) and a high electrical breakdown field of 7–8 MV/cm were measured for capacitors prepared from as-deposited or low temperature (450 °C) annealed films. These results indicate that yttrium oxide is a very promising dielectric to be used in silicon integrated circuits applications.