Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
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DOI：
10.1063/1.3195684
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发表时间：
2009-08-03
影响因子：
4
通讯作者：
Cheng, S. J.
中科院分区：
文献类型：
--
作者：
Chao, C. L.;Chiu, C. H.;Cheng, S. J.
这项工作提出了一种制造2英寸的方法。具有高晶体质量和低残余应变的独立式GaN衬底。在蓝宝石衬底上随机排列了侧壁涂覆二氧化硅（SiO2）的氮化镓纳米棒阵列，作为后续氢化物气相外延（HVPE）的生长模板。涂有SiO2的侧壁的钝化阻止了GaN颗粒在棒之间的空间中聚集，导致它们优先生长在单个棒的顶部。该方法显著提高了GaN晶体质量，并由于HVPE冷却过程中热应变的松弛而导致GaN与基体蓝宝石衬底的自分离。
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual strain. Arrays of GaN nanorods with sidewalls coated with silicon dioxide (SiO2) were randomly arranged on the sapphire substrate as a growth template for subsequent hydride vapor-phase epitaxy (HVPE). The passivation of the sidewalls coated with SiO2 prevents the coalescence of GaN grains in spaces between the rods, causing them to grow preferentially on the top of individual rods. The proposed method significantly improves GaN crystal quality and results in self-separation from the underlying host sapphire substrate due to the relaxation of thermal strains in the HVPE cooling-down process.