ULTRAVIOLET REFLECTION SPECTRUM OF CUBIC CDS
ULTRAVIOLET REFLECTION SPECTRUM OF CUBIC CDS
复制标题
DOI：
10.1103/physrev.140.a633
复制
发表时间：
1965-01-01
期刊：
影响因子：
--
通讯作者：
WOLFF, GA
中科院分区：
文献类型：
--
作者：
CARDONA, M;WEINSTEIN, M;WOLFF, GA
在2-22 eV的光子能量范围内，测量了立方体硫化镉的垂直入射反射谱。样品是用外延沉积的方法在GaAs的{111}“As面”上制备的。最低的直接吸收边在室温下产生2.50 eV的反射峰。E_1峰(5.49 eV)没有显示出六方(纤锌矿)材料的分裂特征。以前报道的纤锌矿类型的Cd在7.12 eV处的F1峰在立方Cd中没有。立方和六方硫化镉的反射光谱的所有其他特征都非常相似。沉积在GaP的{111}“P面”上的硫化镉薄膜的立方-六方混合性质很容易被反射光谱检测到：与纯六方硫化镉相比，E_1峰和F_1峰的分裂分量出现的强度较小。描述和解释了立方和六方硫化镉薄膜的制备和外延。
The normal-incidence reflection spectrum of cubic CdS has been measured for photon energies between 2 and 22 eV. The samples were prepared by epitaxial deposition on the {1 11}" As face" of GaAs. The lowest direct absorption edge produces a reflection peak at 2.50 eV at room temperature. The E 1 peak (at 5.49 eV) does not show the splitting characteristic of hexagonal (wurtzite-type) material. The F 1 peak previously reported for wurtzite-type CdS at 7.12 eV is absent in cubic CdS. All other features of the reflection spectra of cubic and hexagonal CdS are very similar. The mixed cubic-hexagonal nature of CdS films deposited on the {1 11}" P face" of GaP is easily detected with the help of the reflection spectrum: The split component of the E 1 peak and the F 1 peak appear less intensely than in pure hexagonal CdS. The preparation and epitaxy of cubic and hexagonal CdS films are described and interpreted.