Al 0.4Ga 0.6N/Al 0.15Ga 0.85N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes With a One-Dimensional Photonic Crystal Filter
Al 0.4Ga 0.6N/Al 0.15Ga 0.85N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes With a One-Dimensional Photonic Crystal Filter
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DOI：
10.1109/jphot.2016.2594700
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发表时间：
2016-08
影响因子：
2.4
通讯作者：
K. Dong;Dunjun Chen;B. Jin;Xishun Jiang;Jianping Shi
中科院分区：
文献类型：
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作者：
K. Dong;Dunjun Chen;B. Jin;Xishun Jiang;Jianping Shi
设计并研究了一种Al0.15Ga0.85N/Al0.4Ga0.6N分离吸收和倍增雪崩光电二极管（APD），该光电二极管集成了一维光子晶体（PC）滤波器，在蓝宝石衬底背面的空气和周期性PC单元之间具有三周期减反射涂层。计算结果表明，所设计的Al 0. 15 Ga 0. 85 N/Al 0. 4Ga 0. 6 N APD具有更高的增益和更陡的日盲区光谱响应截止边，其峰值响应率和紫外/可见光抑制比分别比常规AlGaN APD提高了近110%和230%。此外，由于在日盲区对反射率有明显的抑制作用，所设计的APD中使用的反射膜可以明显改善光谱响应曲线和光谱响应度。
An Al0.15Ga0.85N/Al0.4Ga0.6N separate absorption and multiplication avalanche photodiode (APD) integrated with the 1-D photonic crystal (PC) filter with a three-period antireflection coating between the air and periodic PC units on the back of the sapphire substrate are designed and studied. The calculated results show that the designed Al0.15Ga0.85N/Al0.4Ga0.6N APD has a much higher gain and a steeper spectral responsivity cutoff edge in the solar-blind region, and its peak responsivity and ultraviolet/visible rejection ratio are enhanced near 110% and 230%, respectively, when compared with the conventional AlGaN APD. Moreover, the antireflection coatings used in the designed APD can obviously improve the spectral response curve and the spectral responsivity due to its significant suppression to the reflectivity the in solar-blind region.