Visualization and suppression of interfacial recombination for high-efficiency large-area pin perovskite solar cells
Visualization and suppression of interfacial recombination for high-efficiency large-area pin perovskite solar cells
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DOI：
10.1038/s41560-018-0219-8
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发表时间：
2018-10-01
期刊：
影响因子：
56.7
通讯作者：
Neher, Dieter
中科院分区：
文献类型：
--
作者：
Stolterfoht, Martin;Wolff, Christian M.;Neher, Dieter
钙钛矿太阳能电池的性能主要受到非辐射复合的限制，或者通过吸收层中的陷阱辅助复合，或者通过钙钛矿/传输层界面处的少数载流子复合。在这里，我们使用瞬态和绝对光致发光成像来可视化具有未掺杂有机电荷传输层的平面pin型钙钛矿太阳能电池中的所有非辐射复合途径。我们在钙钛矿体中发现了显著的准费米能级分裂损失（135 meV），而界面复合导致每个单独界面处80 meV的额外自由能损失，其限制开路电压（V-oc）在钙钛矿和传输层之间插入介电夹层导致这些界面的显著减少。p和n接触处的损耗。利用这些知识和方法，我们展示了可重复的无掺杂剂的1 cm（2）钙钛矿太阳能电池，其效率超过20%（19.83%认证），具有稳定的功率输出、高V-oc（1.17 V）和创纪录的填充因子（>81%）。
The performance of perovskite solar cells is predominantly limited by non-radiative recombination, either through trap-assisted recombination in the absorber layer or via minority carrier recombination at the perovskite/transport layer interfaces. Here, we use transient and absolute photoluminescence imaging to visualize all non-radiative recombination pathways in planar pintype perovskite solar cells with undoped organic charge transport layers. We find significant quasi-Fermi-level splitting losses (135 meV) in the perovskite bulk, whereas interfacial recombination results in an additional free energy loss of 80 meV at each individual interface, which limits the open-circuit voltage (V-oc) of the complete cell to similar to 1.12 V. Inserting ultrathin interlayers between the perovskite and transport layers leads to a substantial reduction of these interfacial losses at both the p and n contacts. Using this knowledge and approach, we demonstrate reproducible dopant-free 1 cm(2) perovskite solar cells surpassing 20% efficiency (19.83% certified) with stabilized power output, a high V-oc (1.17 V) and record fill factor (>81%).