Large lattice relaxation deep levels in neutron-irradiated GaN
Large lattice relaxation deep levels in neutron-irradiated GaN
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DOI：
10.1063/1.2126123
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发表时间：
2005-11
影响因子：
3.2
通讯作者：
S. Li;J. Zhang;C. Beling;Kezhi Wang;Rongxin Wang;M. Gong;C. Sarkar
中科院分区：
文献类型：
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作者：
S. Li;J. Zhang;C. Beling;Kezhi Wang;Rongxin Wang;M. Gong;C. Sarkar
Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at EC−ET=0.17eV. Another line, labeled as N2, at EC−ET=0.23eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements o...
