Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 thin films by selenization of metal precursors
Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 thin films by selenization of metal precursors
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使用二乙基硒化物作为危害较小的来源通过金属前体硒化制备 CuInSe2 薄膜
DOI：
10.1016/s0022-3697(03)00146-x
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发表时间：
2003
影响因子：
4
通讯作者：
S. Chichibu
中科院分区：
文献类型：
--
作者：
T. Yamamoto;M. Nakamura;J. Ishizuki;T. Deguchi;S. Ando;H. Nakanishi;S. Chichibu
采用二乙基硒化物[（C2 H5）2Se：DESe]作为硒源替代H2Se，提出了一种低成本、低危害的制备CuInSe 2薄膜的硒化方法。通过使用N2作为载气，从我们以前的工作中消除了潜在的H2泄漏风险[J. Cryst. Growth 243（2002）404]。用该方法制备的CuInSe 2薄膜的结构和光学性质与用DESe/H2体系硒化制备的薄膜的结构和光学性质基本相同。
A less-hazardous and low cost selenization method for the preparation of CuInSe2films was demonstrated using diethylselenide [(C2H5)2Se:DESe] as a Se source alternative to H2Se. By using N2as a carrier gas, potential H2leakage risk was removed from our previous work [J. Cryst. Growth 243 (2002) 404]. The structural and optical properties of CuInSe2films fabricated by this method were found to be almost equal to those of the films prepared by the selenization process using DESe/H2system.