Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout
Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout
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DOI：
10.1109/tns.2006.885165
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发表时间：
2006-12
影响因子：
1.8
通讯作者：
S. Kuboyama;C. Kamezawa;N. Ikeda;T. Hirao;H. Ohyama
中科院分区：
文献类型：
--
作者：
S. Kuboyama;C. Kamezawa;N. Ikeda;T. Hirao;H. Ohyama
It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation
