Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.
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DOI：
10.1186/1556-276x-6-117
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发表时间：
2011-02-04
影响因子：
--
通讯作者：
Hane K
中科院分区：
文献类型：
--
作者：
Wang Y;Hu F;Hane K
本文报道了用分子束外延（MBE）在独立GaN光栅上外延生长InGaN/GaN量子威尔斯阱。采用电子束光刻技术在硅基GaN衬底上定义了各种GaN光栅，并采用快速原子束刻蚀技术在硅基GaN衬底上实现了各种GaN光栅。从背面去除GaN光栅区域下方的硅衬底以形成独立的GaN光栅，并且随后通过MBE在制备的GaN模板上进行图案化生长。选择性生长在纳米级GaN光栅的辅助下发生，并且取决于光栅周期P和光栅宽度W。重要的是，实现了两个侧面之间的聚结，以产生具有三角形截面的外延光栅。薄的外延光栅具有良好的光致发光性能。本工作为进一步实现GaN基集成光学器件的制备提供了一条可行的途径。PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.