Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity
Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity
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DOI：
10.1039/c4tc02327g
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发表时间：
2015-01-01
影响因子：
6.4
通讯作者：
Reid, G.
中科院分区：
文献类型：
--
作者：
Benjamin, S. L.;de Groot, C. H.;Reid, G.
通过 (BuELI)-Bu-n (E = Se, Te) 与适当的反应，设计并合成了一系列烷基硫属锑化合物 (Me2SbSeBu)-Bu-n、MeSb((SeBu)-Bu-n)(2)、Sb((SeBu)-Bu-n)(3) 和 MeSb((TeBu)-Bu-n)(2)，作为化学气相沉积 (CVD) 的潜在前体。卤斯替宾、Me3-nSbCln (n = 1, 2, 3)，并通过 H-1、C-13{H-1} 和 Se-77{H-1} 或 Te-125{H-1} NMR 光谱进行表征（视情况而定）。通过扫描电子显微镜、能量色散 X 射线光谱、拉曼光谱和薄膜 X 射线衍射证实，MeSb((SeBu)-Bu-n)(2) 和 MeSb((TeBu)-Bu-n)(2) 分别是高质量 Sb2Se3 和 Sb2Te3 晶体薄膜低压 CVD 非常有效的单源前驱体。霍尔电导率、载流子迁移率、载流子密度以及 Sb2Te3 的塞贝克系数测量揭示了与通过原子层沉积或分子束外延沉积的 Sb2E3 相当的电子特性，表明适合纳入电子器件结构的材料质量和性能。研究发现，基底和沉积条件的选择会显着影响 Sb2Te3 微晶的形态和择优取向，从而能够沉积具有 < 1 1 0 > 或 < 0 0 1 > 排列的薄膜。使用微图案基底可以仅将 Sb2Te3 晶体二维微阵列选择性沉积到暴露的 TiN 表面上。
A series of alkylchalcogenostibines, (Me2SbSeBu)-Bu-n, MeSb((SeBu)-Bu-n)(2), Sb((SeBu)-Bu-n)(3) and MeSb((TeBu)-Bu-n)(2), have been designed and synthesised as potential precursors for chemical vapour deposition (CVD) by reaction of (BuELI)-Bu-n (E = Se, Te) with the appropriate halostibine, Me3-nSbCln (n = 1, 2, 3), and characterised by H-1, C-13{H-1} and Se-77{H-1} or Te-125{H-1} NMR spectroscopy as appropriate. MeSb((SeBu)-Bu-n)(2) and MeSb((TeBu)-Bu-n)(2) are very effective single source precursors for the low pressure CVD of high quality crystalline thin films of Sb2Se3 and Sb2Te3, respectively, confirmed by scanning electron microscopy, energy dispersive X-ray spectroscopy, Raman spectroscopy and thin film X-ray diffraction. Hall conductivity, carrier mobility, carrier density and, in the case of Sb2Te3, Seebeck coefficient measurements reveal electronic characteristics comparable with Sb2E3 deposited by atomic layer deposition or molecular beam epitaxy, suggesting materials quality and performance suitable for incorporation into electronic device structures. Choice of substrate and deposition conditions were found to significantly affect the morphology and preferred orientation of Sb2Te3 crystallites, enabling deposition of films with either < 1 1 0 > or < 0 0 1 > alignment. Use of micro-patterned substrates allowed selective deposition of crystalline 2D micro-arrays of Sb2Te3 onto exposed TiN surfaces only.