Formation of Etch Pits on Germanium Surfaces Loaded with Reduced Graphene Oxide in Water
Formation of Etch Pits on Germanium Surfaces Loaded with Reduced Graphene Oxide in Water
复制标题
水中负载还原氧化石墨烯的锗表面蚀刻坑的形成
DOI：
10.1149/07704.0127ecst
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Arima Kenta
中科院分区：
文献类型：
--
作者：
Nakade Kazuki;Hirano Tomoki;Li Shaoxian;Saito Yusuke;Mori Daichi;Morita Mizuho;Kawai Kentaro;Arima Kenta
氧化石墨烯（GO）通过在氩气环境中进行热处理或使用一水合肼进行化学还原。将负载还原氧化石墨烯（RGO）的Ge表面浸入含有溶解O2分子的水中。我们证明了腐蚀坑是由浸泡形成的，其形状取决于RGO在Ge上的初始形态（颗粒或分散片）。我们推测，通过RGO的催化活性，与RGO接触的Ge表面在水中被选择性蚀刻，从而增强氧还原反应。
Graphene oxide (GO) was reduced by either a thermal treatment in Ar ambient or a chemical process using hydrazine monohydrate. A Ge surface loaded with reduced GO (RGO) was immersed in water containing dissolved O2 molecules. We demonstrated that etch pits were formed by the immersion, whose shape depended on the initial form (particles or dispersed sheets) of RGO on Ge. We speculate that a Ge surface in contact with RGO is selectively etched in water by the catalytic activity of RGO, which enhances the oxygen reduction reaction.