Topological Phases in the Zeroth Landau Level of Bilayer Graphene
Topological Phases in the Zeroth Landau Level of Bilayer Graphene
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DOI：
10.1103/physrevlett.112.046602
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发表时间：
2014-01-28
影响因子：
8.6
通讯作者：
Abanin, D. A.
中科院分区：
文献类型：
--
作者：
Papic, Z.;Abanin, D. A.
我们分析了双层石墨烯零朗道能级的相图，考虑了库仑相互作用的屏蔽和两个简并子能级之间的强混合。在填充因子nu=-1、-4/3、-5/3、-8/5、-1/2时，我们确定了健壮的量子霍尔态，并用一个易处理的模型讨论了它们的基态性质、集体激发以及与更常见的态的关系。特别是，我们提出了nu=-1/2态是非阿贝尔态的证据，并用Moore-Read波函数或它的粒子-空穴共轭来描述，同时排除了其他候选态，如331态。
We analyze the phase diagram of the zeroth Landau level of bilayer graphene, taking into account the realistic effects of screening of the Coulomb interaction and strong mixing between two degenerate sublevels. We identify robust quantum Hall states at filling factors nu = -1, -4/3, -5/3, -8/5, -1/2 and discuss the nature of their ground states, collective excitations, and relation to the more familiar states in GaAs using a tractable model. In particular, we present evidence that the nu = -1/2 state is non-Abelian and described by either the Moore-Read wave function or its particle-hole conjugate, while ruling out other candidates such as the 331 state.