Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time
Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time
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DOI：
10.1063/1.4933258
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发表时间：
2015-10-12
影响因子：
4
通讯作者：
Berger, Paul R.
中科院分区：
文献类型：
--
作者：
Growden, Tyler A.;Brown, E. R.;Berger, Paul R.
通过实验确定了量子阱寿命对大信号谐振隧道二极管 (RTD) 开关时间的影响。传统垂直 In0.53Ga0.47As/AlAs RTD 的生长、制造和表征。使用高速示波器测量开关时间，发现接近计算的 RC 限制 10%-90% 开关时间与量子阱准束缚态寿命之和。该方法提供了实验证据，表明两个固有谐振隧道特征时间独立作用，并且准束缚态寿命充当 RTD 大信号速度的量子限制。 (C) 2015 AIP 出版有限责任公司。
An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a highspeed oscilloscope and found to be close to the sum of the calculated RC-limited 10%-90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs. (C) 2015 AIP Publishing LLC.