Temperature-Programmed Desorption Observation of Graphene-on-ilicon Process
Temperature-Programmed Desorption Observation of Graphene-on-ilicon Process
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硅基石墨烯过程的程序升温解吸观察
DOI：
10.1143/jjap.50.070102
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发表时间：
2011
影响因子：
1.5
通讯作者：
Maki Suemitsu
中科院分区：
文献类型：
--
作者：
Shunsuke Abe;Hiroyuki Handa;Ryota Takahashi;Kei Imaizumi;Hirokazu Fukidome;Maki Suemitsu
由于其工业适应性，通过在硅衬底上的SiC薄膜的超高真空退火形成的硅基石墨烯（GOS）最近引起了人们的关注。然而，对GOS的生长机制知之甚少。本文证明了氘的程序升温脱附光谱（D2-TPD）可以作为一种强有力的原位探针来研究SiC晶体上外延石墨烯（EG）形成过程中的表面化学。利用D2-TPD可以得到表面化学计量比和表面原子的背键，以及它们与[Si（111），Si（100），Si（110）]晶向的关系。根据实验结果，讨论了不同取向的GOS生长机制的差异。
With its industrial adaptability, graphene-on-silicon (GOS), formed by ultrahigh-vacuum annealing of a SiC thin film on a silicon substrate, is attracting recent attention. Little is known, however, about the growth mechanism of GOS. We demonstrate in this paper that temperature-programmed-desorption spectroscopy of deuterium (D 2-TPD) can be a powerful in-situ probe to investigate the surface chemistry during formation of epitaxial graphene (EG) on SiC crystals. Using the D 2-TPD, the surface stoichiometry and the back-bonds of the surface atoms, including their dependence on the crystallographic orientations [Si (111), Si (100), and Si (110)] can be obtained. Difference in the growth mechanism of GOS among the orientations is discussed based on the results.