Parameter extraction for a Ti/4H-SiC Schottky diode
Parameter extraction for a Ti/4H-SiC Schottky diode
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DOI：
10.1088/1009-1963/12/1/317
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发表时间：
2003-01
期刊：
影响因子：
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通讯作者：
Shou-Guo Wang;Yimen Zhang;Yu-Ming Zhang
中科院分区：
文献类型：
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作者：
Shou-Guo Wang;Yimen Zhang;Yu-Ming Zhang
在MIS模型的基础上，提出了一种利用SiC肖特基二极管的I-V特性提取其参数的简单方法。据我们所知，首次提取了界面氧化物电容Ci。本文制作的4 H-SiC肖特基二极管的测试参数为：理想因子n、串联电阻Rs、零场势垒高度<$B0、界面态密度Dit、界面氧化层电容Ci和界面态中性能级<$0。
Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the I-V characteristics. The interface oxide capacitance Ci is extracted for the first time, as far as we know. Parameters of 4H-SiC Schottky diodes fabricated for testing in this paper are: the ideality factor n, the series resistance Rs, the zero-field barrier height ϕB0, the interface state density Dit, the interface oxide capacitance Ci and the neutral level of interface states ϕ0.