High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors
High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors
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基于同等尺寸 IGZO 和 DNTT 源栅晶体管的高增益互补逆变器
DOI：
10.1039/d3tc02474a
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发表时间：
2023
影响因子：
6.4
通讯作者：
Bestelink E
中科院分区：
文献类型：
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作者：
Bestelink E
我们报告了使用薄膜源极门控晶体管（SGT）的互补电路的首次实现。 n沟道和p沟道SGT分别使用无机和有机半导体非晶InGaZnO (IGZO)和二萘并[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩(DNTT)制造。即使在没有横向场释放结构的情况下，SGT 也表现出平坦的输出特性和早期饱和（dVDSAT/dVGS 分别 = 0.2 和 0.3），这要归功于分别用 Pt 和 Ni 实现的整流源极接触。因此，互补逆变器表现出 368 V V−1 的出色小信号增益和超过理论最大值 94% 的噪声容限。我们表明，此类逆变器的跳变点可以通过光学方式进行调整，在紧凑型探测器和传感器中具有有趣的应用。使用 Silvaco ATLAS 进行的数值模拟表明，优化且单片集成的基于 SGT 的互补逆变器可以达到超过 9000 V V−1 的小信号增益，使其非常适合低速和中速数字薄膜应用。该概念验证演示为进一步集成和电路级优化提供了令人鼓舞的结果。
We report the first implementation of a complementary circuit using thin-film source-gated transistors (SGTs). The n-channel and p-channel SGTs were fabricated using the inorganic and organic semiconductors amorphous InGaZnO (IGZO) and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), respectively. The SGTs exhibit flat output characteristics and early saturation (dVDSAT/dVGS = 0.2 and 0.3, respectively), even in the absence of lateral field-relief structures, thanks to the rectifying source contacts realized with Pt and Ni, respectively. Hence, the complementary inverter shows excellent small-signal gain of 368 V V−1 and noise margin exceeding 94% of the theoretical maximum. We show that the trip point of such inverters can be tuned optically, with interesting applications in compact detectors and sensors. Numerical simulation, using Silvaco ATLAS, reveals that optimized and monolithically-integrated SGT-based complementary inverters may reach a small-signal gain over 9000 V V−1, making them highly suited to low and moderate speed digital thin-film applications. This proof-of-concept demonstration provides encouraging results for further integration and circuit level optimizations.