Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap
Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap
复制标题
全带隙三维光子晶体的钻孔交替层结构
DOI:
10.1116/1.1319824
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发表时间:
2000
影响因子:
1.4
通讯作者:
C. Takahashi
中科院分区:
文献类型:
--
作者:
E. Kuramochi;M. Notomi;T. Tamamura;T. Kawashima;S. Kawakami;J. Takahashi;C. Takahashi
A new three-dimensional photonic crystal structure is designed to simplify fabrication. A calculation of the band structure predicts that this photonic crystal has a complete photonic band gap in all directions. The entire three-dimensional periodic structure, except for the vertically drilled holes, is formed by automatic shaping during bias sputtering deposition. The fabrication technologies used to construct this photonic crystal are electron beam lithography, bias sputtering, and fluoride-gas electron cyclotron resonance etching. Our preliminary fabrication reveals that each technology can be controlled well enough to lead to the creation of a photonic band gap material for an optical communication wavelength.