Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap

Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap
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全带隙三维光子晶体的钻孔交替层结构

DOI:
10.1116/1.1319824
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发表时间:
2000
影响因子:
1.4
通讯作者:
C. Takahashi
C. Takahashi
中科院分区:
工程技术4区
文献类型:
--
作者:
E. Kuramochi;M. Notomi;T. Tamamura;T. Kawashima;S. Kawakami;J. Takahashi;C. Takahashi

文献摘要

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一种新的三维光子晶体结构旨在简化制造。能带结构的计算预测该光子晶体在所有方向上都具有完整的光子带隙。除垂直钻孔外,整个三维周期结构是在偏压溅射沉积过程中通过自动成形形成的。用于构建这种光子晶体的制造技术是电子束光刻、偏压溅射和氟化物气体电子回旋共振蚀刻。我们的初步制造表明,每种技术都可以得到足够好的控制,从而创造出用于光通信波长的光子带隙材料。
A new three-dimensional photonic crystal structure is designed to simplify fabrication. A calculation of the band structure predicts that this photonic crystal has a complete photonic band gap in all directions. The entire three-dimensional periodic structure, except for the vertically drilled holes, is formed by automatic shaping during bias sputtering deposition. The fabrication technologies used to construct this photonic crystal are electron beam lithography, bias sputtering, and fluoride-gas electron cyclotron resonance etching. Our preliminary fabrication reveals that each technology can be controlled well enough to lead to the creation of a photonic band gap material for an optical communication wavelength.