A new method for IDDT test of CMOS circuits
A new method for IDDT test of CMOS circuits
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CMOS电路IDDT测试新方法
DOI：
10.1109/icccas.2008.4657982
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Jian Zhang
中科院分区：
文献类型：
--
作者：
Maowen Nie;Hongbing Xu;Jian Zhang
小波分析由于其在信号处理中的有效性而受到人们的广泛关注。作为小波分析的应用，小波包和小波神经网络在故障诊断中被用来有效地提取信息。本文提出了一种从瞬时供电电流中提取信息并进行故障诊断的新方法。该方法是基于奇异性，Lipschitz指数和多分辨率分析。虽然它很容易实现，但它是有效的。对补偿后的CMOS运算放大器基准电路的实验结果表明，该方法对桥接故障和开路故障的检测和定位是有效的。
Wavelet analysis attracts much attention because of its effectiveness in signal process. As applications of wavelet analysis, wavelet packets and wavelet neural networks have been used for effectively exacting information in fault diagnosis. This paper presents a new method for exacting information from IDDT (transient power supply current) and performing fault diagnosis. This method is based on singularity, Lipschitz exponents and multi-resolution analysis. Though it is easy and simple to implement, it is efficient. Experimental results for the compensated CMOS operational amplifier benchmark circuit show that it is effective for detecting and locating bridging faults and stuck-open-faults.