SMM observations of Si IV and O IV bursts in solar active regions
SMM observations of Si IV and O IV bursts in solar active regions
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DOI：
10.1086/164939
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
M. Hayes;R. Shine
中科院分区：
文献类型：
--
作者：
M. Hayes;R. Shine
本文分析了太阳活动区Si Ⅳ和O Ⅳ谱线的紫外光谱和偏振观测。在28弧秒乘28弧秒的视野内，所有类型的紫外线爆发的平均频率是每四分钟一次。大约80%的爆发显示出Si IV/O IV比率的增加，表明密度增加。所示的电子密度通常在10到11 - 12的范围内，16%表示更高的密度。一些能量更高的爆发表现出类似耀斑的特征，其中一些显示出二次增亮，这可能是耀斑的软X射线渐变阶段的模拟。这些紫外线爆发的高频率及其与硬X射线微耀斑和色球蒸发的可能联系，可能使它们在活动区的能量学和维持其增强的日冕发射方面极为重要。23篇参考文献。
Observations of Si IV and O IV lines in solar active regions taken by the ultraviolet spectrometer and polarimeter on board the SMM are analyzed. The average frequency of UV bursts of all types is one every four minutes in a 28 arcsec by 28 arcsec field of view. About 80 percent of the bursts show an increased Si IV/O IV ratio, suggesting a density increase. The indicated electron densities are generally in the 10 to the 11th-12th range, with 16 percent indicating higher densities. Some of the more energetic bursts exhibit flarelike characteristics, and some of these show a secondary brightening which may be an analog of the soft X-ray gradual phase of flares. The high frequency of these UV bursts and their possible association with hard X-ray microflares and chromospheric evaporation may make them extremely important in the energetics of active regions and in the maintenance of their enhanced coronal emission. 23 references.