Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)
Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)
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DOI：
10.1364/optica.443979
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发表时间：
2021-11-20
期刊：
影响因子：
10.4
通讯作者：
Lee, Minjoo Larry
中科院分区：
文献类型：
--
作者：
Dhingra, Pankul;Su, Patrick;Lee, Minjoo Larry
单片结合氮化硅（SiNx）光子学技术与III-V有源器件可以开辟广泛的片上应用，跨越类似400-4000 nm的宽波长范围。随着基于量子阱（QW）和量子点（QD）活性区的氮化、砷化和锑化激光器的发展，目前Si上集成III-V激光器的波长范围为400 nm至11 μ m，其中红色波长范围为630-750 nm。在这里，我们展示了在室温下连续波工作的cmos兼容Si（001）衬底上单片生长的红色In0.6Ga0.4 PQW和远红色In PQD激光器。在硅基上，QW和QD激光器分别获得了550 A/cm(2)和690 A/cm(2)的低阈值电流密度，发射波长为680-730 nm。这项工作代表了在硅上集成可见红色激光的一步，允许将集成光子学应用于包括生物光子传感、量子计算和近眼显示在内的应用。(C)根据Optica开放获取出版协议条款，2021年Optica出版集团
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of similar to 400-4000 nm. With the development of nitride, arsenide, and antimonide lasers based on quantum well (QW) and quantum dot (QD) active regions, the wavelength palette of integrated III-V lasers on Si currently spans 400 nm to 11 mu m, with a crucial gap in the red-wavelength regime of 630-750 nm. Here, we demonstrate red In0.6Ga0.4 PQW and far-red In PQD lasers monolithically grown on CMOS-compatible Si (001) substrates with continuous-wave operation at room temperature. A low-threshold current density of 550 A/cm(2) and 690 A/cm(2) with emission at 680-730 nm was achieved for QW and QD lasers on Si, respectively. This work represents a step toward the integration of visible red lasers on Si, allowing the utilization of integrated photonics for applications including biophotonic sensing, quantum computing, and near-eye displays. (C) 2021 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement