A μ-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays
A μ-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays
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DOI：
10.1109/ted.2015.2433676
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发表时间：
2015-07-01
影响因子：
3.1
通讯作者：
Prodromakis, Themis
中科院分区：
文献类型：
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作者：
Berdan, Radu;Serb, Alexander;Prodromakis, Themis
电阻式随机存取存储器（RRAM）的无选择器交叉阵列（也称为忆阻器）在操作期间传导大的寄生电流，这可显著破坏交叉点模拟电阻（M-t）测量的准确性。为了缓解这个问题，我们设计、构建并测试了忆阻器表征和测试（mCAT）仪器，该仪器迫使交叉阵列内的寄生电流重新分布，从而显著提高Mt测量精度。我们使用定制的32 x 32分立电阻交叉阵列校准了mCAT，随后在相同尺寸的固态TiO 2-x RRAM阵列、晶圆和封装上展示了其功能。我们的平台可以测量1 k Ω到1 M Ω范围内的独立Mt，
Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (M-t) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 x 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 k Omega to 1 M Omega with